Preface by Yufeng Jin ix

Preface by Shenglin Ma xi

Acknowledgments xv

About the authors xvii

1 Introduction to HR-Si interposer technology 1
1.1 Background 1
1.2 3D RF heterogeneous integration scheme 2
1.3 HR-Si interposer technology 7
1.4 TGV interposer technology 16
1.5 Summary 23
1.6 Main work of this book 24
References 25

2 Design, process, and electrical verification of HR-Si interposer for 3D heterogeneous RF integration 27
2.1 Introduction 27
2.2 Design and fabrication process of HR-Si TSV interposer 31
2.3 Design and analysis of RF transmission structure built on HR-Si TSV interposer 38
2.4 Research on HR-Si TSV interposer fabrication process 43
2.4.1 Double-sided deep reactive ion etching (DRIE) to open HR-Si TSV 43
2.4.2 Thermal oxidation to form firm insulation layer 44
2.4.3 Patterned Cu electroplating to achieve metallization and establish RDL layer 45
2.4.4 Electroless nickel electroless palladium immersion gold (ENEPIG) 54
2.4.5 Surface passivation 54
2.5 Electrical characteristics analysis of transmission structure on HR-Si TSV interposer 55
2.6 Conclusion 61
References 63

3 Design, verification, and optimization of novel 3D RF TSV based on HR-Si interposer 65
3.1 Introduction 65
3.2 HR-Si TSV-based coaxial-like transmission structure 69
3.3 Redundant RF TSV transmission structure 70
3.4 Sample processing and test result analysis 72
3.5 Optimization of HR-Si TSV interposer 83
3.6 Conclusion 90
References 93

4 HR-Si TSV integrated inductor 95
4.1 Introduction 95
4.2 HR-Si TSV interposer integrated planar inductor 96
4.3 Research on 3D inductor based on HR-Si interposer 113
4.4 Summary 123
References 123

5 Verification of 2.5D/3D heterogeneous RF integration of HR-Si interposer 125
5.1 Introduction 125
5.2 Four-channel 2.5D heterogeneous integrated L-band receiver 126
5.3 3D heterogeneous integrated channelized frequency conversion receiver based on HR-Si interposer 132
5.3.1 HR-Si interposer integrated microstrip interdigital filter 134
5.3.2 Design, fabrication, and test of HR-Si interposer 142
5.3.3 3D heterogeneous integrated assembly and test 145
5.4 Conclusions 150
References 151

6 HR-Si interposer embedded microchannel 153
6.1 Introduction 153
6.2 Design of a HR-Si interposer embedded microchannel 158
6.3 Thermal characteristics analy sis of a TSV interposer embedded microchannel 161
6.3.1 Simplified calculation based on a variable diffusion angle 162
6.3.2 Direct calculation based on analytical formula 163
6.3.3 A fitting formula based on simulation results 164
6.3.4 Equivalent thermal resistance network based on the high thermal conductivity path 164
6.4 Process development of a TSV interposer embedded microchannel 172
6.5 Characterization of cooling capacity of HR-Si interposer with an embedded microchannel 176
6.6 Evaluation of HR-Si interposer embedded with a cooling microchannel 178
6.7 Application verification of HR-Si interposer embedded with microchannel 188
6.8 Conclusions 191
References 192

7 Patch antenna in stacked HR-Si interposers 197
7.1 Introduction 197
7.2 Theoretical basis of patch antenna 200
7.3 Design of a patch antenna in stacked HR-Si interposers 200
7.4 Processing of a patch antenna in stacked HR-Si interposers 213
7.5 Test and analysis of patch antenna in stacked HR-Si TSV interposer 213
7.6 Summary 222
References 222

8 Through glass via technology 225
8.1 Introduction 225
8.2 TGV fabrication 225
8.3 Metallization of TGV 228
8.4 Passive devices based on TGV technology 230
8.4.1 Technology description 230
8.4.2 MIM capacitor 230
8.4.3 TGV-based bandpass filter 231
8.5 Embedded glass fan-out wafer-level package technology 235
8.5.1 Technology description 235
8.5.2 AIP enabled by eGFO package technology 236
8.5.3 3D RF integration enabled by eGFO package technology 242
8.6 2.5D heterogeneous integrated L-band receiver based on TGV interposer 242
8.7 Conclusions 249
References 250

9 Conclusion and outlook 251

Appendix 1 Abbreviations 255

Appendix 2 Nomenclature 259

Appendix 3 Conversion factors 267

Index 269